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sf6 o2 solution for 121kv

sf6 o2 solution for 121kv

2018-8-27、,、、,,,、、, ...

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  • Two Cryogenic Processes Involving SF6, O2, and SiF4 for

    SF6 or SF6/O2 plasmas are used as etch cycles and SiF4/O2 plasmas are used as passivation cycles. Trenches with a critical dimension of 0.8 µm have been etched to a depth of 38 µm with an

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  • Oem Voc Solution For Sale

    Welcome To Relations. SF6Relations (Henan) Co., Ltd. is a professional company focusing on research, production and sales of SF6 Tools, includ SF6 Monitoring Analysis equipment.SF6 Recyling Handling Equipment.SF6 On-site service and training.There is a place where you’ll get the Perfect SF6 solution for all your needs.

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  • Cold Weather Operating Problems with SF6 Circuit

    2014-3-16Cold Weather Operating Problems with SF 6 Circuit Breakers. IEEE Standards. ANSI/IEEE C37.04-1979 1 and ANSI/IEEE C37.010-1979 2 are the standards relating to the rating structure

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  • Oxidation of sulfur hexafluoride - ScienceDirect

    Clearly, the SF6 oxidation must be intrinsically very much slower than the methane pyrolysis. It would appear that the lower rates of SF6-O2 reactions, even at very high temperatures, drastically influence the product profiles and the extent of per- manent energy abstraction. This does not appear to be related to the small mass of the

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  • Fixed SF6 Gas Detector | TOC-750 | Supplier |

    The TOC-750 SF6 Gas Detector is a fixed addressable sensor designed to provide continuous, low level detection for Sulphur Hexafluoride leaks. The TOC-750 SF6 gas detector uses the latest sensor technology, utilising non-dispersive infrared detection. This provides reliable, accurate and early detection of SF6 leaks.

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  • Did anyone have experience in etching SiO2 with SF6 in

    The gasese we have are: SF6(0-100sccm), O2(0-20sccm), Ar(0-5sccm), and C4F8. my sample is 3um SiO2 deposited on the surface of Si wafer. The recipe I designed for 3um SiO2 etching is:A more typical silicon-oxide recipe from the semiconductor industry would be to use Ar/O2/C4F8:  80:10:10%. Using argon dilution boost the electron...Best answer 11Hi,I never used SF6 to etch SiO2 before coz SF6 is a bit toxic and it migh leave some residue over the etched samples. I suggest you use XPS or si...1We also use C4F8 as the chemically active component in RIE oxide etching. SF6 etches silicon much faster than SiO2, so as soon as you break through...2why dont you use HF for SiO2 etching.?it is more easy, fast and realiable 0oxide is a typical hard mask in ICP/DRIE etching.  Oxide is also used as an etch stop for SF6, such as if you have a oxide nitride stack, SF6 is a...0On our Panasonic ICP system, I developed the following recipe using a Chromium hard mask (not photoresist, which etches rather quickly in this SF6...0To my experience, yes solely SF6, etches SiO2 in ICP but I am not sure of the etch rate.0

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  • Annie Gas detector and SF6 solution -

    Translate this page上领英,在全球领先职业社交平台查看Annie Gas detector and SF6 solution的职业档案。Annie的职业档案列出了 1 个职位。上领英,查看Annie的完整档案,结识职场人脉和查看相似公司的职位。Title: Gas analyzer, SF6 solution, air

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  • Negative ion electrospray mass spectrometry of

    2020-1-1The total current and selected ion currents from the electrospray ionization (ES1) of 10−5 M solutions of cocaine hydrochloride and deoxycytidine monophosphate (dCMP) monosodium salt in methanol and water solvents were compared in positive and negative ion modes, respectively, without and with SF6,

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  • 南京顺泰科技有限公司

    Translate this page南京顺泰科技有限公司创立于2002年5月份,是从事电力行业监测、检测仪器产品研发、生产、销售、服务专业化的科技型民营企业,先后被评为江苏省高新技术企业、国家级高新技术企业、江苏省百家优秀科技成长型企业、江苏省中小企业创新能力建设示范企业等;我公司是DL/T 1140-2012《电气设备六

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  • 2 TFT_LCD Array Processs讲义0821_图

    Translate this pagewenku.baidu.com›百度文库›语言/资格考试2010-12-6SF6/HCl/O2 SiFx CF4/O2 N2 O2 CO ?i?? 405 337 450 25000 20000 Intensity (a.u.) Endpoint (A uto detect) A l-396nm 15000 10000 5000 Cl-726nm 0 0 20 40 60 80 Etch Time (sec) 100 120 Excellent Step Coverage Passivation S/D Metal Insulator Gate Glass [email protected]

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  • Solubility of gases in liquids. 12 Solubility of He, Ne

    1978-1-1The solubility of 11 gases in octamethylcyclotetrasiloxane (OMCTS) has been determined at atmospheric pressure in the range 292 to 313 K. From the results partial molar Gibbs energy, enthalpy, and entropy of solution for 1 atm partial pressure of gas and 298.15 K have been dervied.

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  • Reactive ion beam etching of Si/SiO2 systems using

    1990-12-2Etch rates and ion current densities related to the etching conditions as a function of the gas composition (% OZ in O2+SF6) for a 3-grid extraction system (graphite), total pressure p = 6.0 x 10-4 mbar, reference magnetic field B0 = 7.2 mT, RF power, PRF = 500 W, total voltage V,,,, = 400 V, net-to-total voltage ratio R = 0.9.

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  • 配电室辅助监控系统在配电室智能化改造

    Translate this page2019-8-23配电室辅助监控系统对防盗门磁、电缆温度、温湿度、臭氧浓度、电缆沟水位、漏水、SF6气体含量、O2含量、烟雾、明火、人体感应、电子围栏等各种监测信息及报警数据进行分析,并可以根据预先设置的上下限值,联动控制空调、视频、灯光、加热

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  • 智能开闭所智能监测终端_图文_百度文库

    Translate this pagewenku.baidu.com›百度文库›互联网智能开闭所(配电房)综合监测 GP事业部 ZHEJIANG HUAYUN INFORMATION TECHNOLOGY CO.,LTD. 目录 | Contents PART 01 项目背景 PART 02 方案介绍 PART 03 工作计划 项目里程碑(上) 3 Project Development Milestones 2016 起源 2016.12.20 省公司 项目方向

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  • Antireflective nanostructures fabricated by reactive ion

    2013-4-15And the etching time, etching power and F SF6 /F O2 of this sample are 20 min, 150 W and 18 sccm/6 sccm, respectively. In order to get a good antireflective nanostructure, the F SF6 /F O2 is a very important etching parameter and the passivation effect of O 2 and the etching effect of SF 6 must achieve a good

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  • 等离子系统 Archive - Muegge

    Translate this page2021-3-13等离子体系统 半导体元器件已经成为我们日常生活中不可缺少的产品。没有人愿意想象一个没有他们的未来。然而,这些设备的制造需要高精尖的设备和深入的工艺知识–随着技术的进步,等离子体和等离子体辅助应用的控制所面临的挑战也在增加。 我们与客户和研究机构密切合作,了解市场,并

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  • RIE texturing optimization for thin c-Si solar cells in

    2008-5-29Edge isolation was performed with a mixture solution of HF, HNO 3 and CH 3 COOH in suitable proportions. A SiN x : H film of thickness 730 ± 10 Å and a refractive index of 2.24 was prepared using the inductively coupled plasma chemical vapour deposition (ICP–CVD) technique and this film served as an antireflection

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  • Calorimetric Heats of Adsorption and Adsorption

    2019-5-26A Tian−Calvet type calorimeter is applied to the simultaneous determination of adsorption isotherms and heats of adsorption. This is the first of a series of studies of the effect of adsorbate size and polarity on the energetics of adsorption in zeolites. The adsorbate gases used in this study are quadrupolar (N2 and CO2) and nonpolar (Ar, O2…

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  • Ningbo Ligong Online Monitoring

    Translate this page2021-1-19SF6气体检测浓度 50~3000ppmv 2 SF6气体检测灵敏度 ±5% 3 氧气检测浓度 0~100% 4 氧气测量精度 ±2% 5 SF6气体浓度报警点 1000ppmv(用户可自由设定) 6 氧气浓度报警点 18%(用户可自由设定) 7 温度、湿度范围-50~100℃,0~99RH

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  • Sulfur hexafluoride | F6S - PubChem

    Sulfur hexafluoride is a sulfur coordination entity consisting of six fluorine atoms attached to a central sulfur atom. It is the most potent greenhouse gas currently known, with a global warming potential of

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  • New IR SF6 Gas Detection Capability - International Gas

    New SF6 Gas Detection Solutions. Our new line of IR SF 6 gas leak detectors, provides a unique solution for continuous SF 6 monitoring. The detector uses ground-breaking NDIR sensors coupled with our

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  • SF6 Pyrolysis Decomposition in N2 or O2 Bath Gas and

    An experimental program was carried out in a conventional 1.5-in-diam stainless-steel shock tube behind incident shocks in mixtures of SF6, SF6+O3, and SF6+O2, all diluted with Ar. Initial shock

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  • 配电房/开闭所智能巡检控制系统 _RFID世

    Translate this page2018-8-27智能巡检控制系统是专为开闭所、配电房智能远程巡检管理服务的新一代智能产品,它集现代移动通信技术、计算机技术、电力测量技术于一身,实现配变异常远程告警,加强了电力部门技术远程巡检能力,生成电力部门的各项管理数据、分析曲线、报表等,为电力部门精细化管理提供了科学的

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  • 智能配电房综合监控系统核心优势与配套

    Translate this page2019-6-21TIP3000智能配电房综合监控系统,是对小区、工业园区等变配电场所设备的状态监测、环境的实时监控、安防监控、火灾消防等信息的检测和控制。系统对各种监测及报警数据进行分析,实时反映现场设备运行的环境情况、设备本身运行情况,通过联动控制,保证配电房场所的电力设备安全运行。

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  • Film models for multicomponent mass transfer: Diffusion

    1982-1-1The exact solution of the Maxwell-Stefan equations for steady state diffusion in a stagnant film due to Krishna and Standart (1976) is compared to the approximate solutions of Toor (1964) and Stewart and Prober (1964) for osmotic diffusion of oxygen in the three physiological gas mixtures He-N2-O2, He-SF6-02, N2-SF6-O2.

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  • 无人值守配电房环境辅助监控系统方案

    Translate this page2020-10-222020-10-22 10:43:57 摘要: 无人值守配电房环境辅助监控系统方案根据配电房内实际温湿度智能调节空调的运行状态,使配电房始终保持恒温恒湿; 避免空调长期运行,延长空调使用寿命,降低运营成本; 关键词: 无人值守配电房 [0 篇] 配电房环境监测 [0 篇] 配电房运维 [0 篇] 配电房监控系统 [0 篇

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  • Plasma systems Archive - Muegge

    2021-3-17PLASMA SYSTEMS Semiconductor components have become indispensable for products of our daily life. Nobody wants to imagine a future without them. However, the manufacture of these devices requires highly sophisticated equipment and in-depth process knowledge – and as technology advances, the

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  • 石油化工标准气体_佛山科的_法国液化空

    Translate this page氧气 O2 氦气 He 空气 Air 一氧化氮 NO 一氧化碳 CO 二氧化碳 CO2 六氟化硫 SF6 四氟化碳 CF4 杜瓦罐 LGC 甲烷/空气 CH4/Air 硫化氢/氮气 H2S/N2 一氧化碳/氮气 CO/N2 二氧化碳/空气 CO2/Air 氨气/氮气 NH3/N2 氢气/氮气 H2/N2 一氧化氮/氮气 NO/N2

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  • 可燃气报警器如何标定?_佛山科的_法国

    Translate this page可燃气报警器如何标定?需要哪些标准气体?点我全知道。 关于我们 联系我们 佛山市科的气体化工有限公司版权所有 广东省佛山市南海区狮山镇321国道仙溪段 TEL: 400 052 9166 Email: [email protected]

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  • 工艺技术3-_刻蚀.ppt - max文档投稿赚钱

    Translate this page2017-8-1工艺技术3-_刻蚀.ppt,IC工艺技术系列讲座 第三讲 ETCHING 刻蚀 讲座提要 1. General 1.1 Isotropic/Anisotropic etch (无定向/定向刻蚀) 1.2 Facility(动力环境) 2. Wet etch 2.1 Wet etch mechanism (湿化刻蚀机理) 2.2 BOE etch (氧化硅刻蚀) 2.3

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