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sf6 o2 tools toshiba

sf6 o2 tools toshiba

The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch Silicon Dioxide, Silicon Nitride, and Silicon. Other gases available are Argon, Hydrogen, and Oxygen.

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  • SF6 insulated Storage Systems - Wilco Kats

    SF6 insulated Storage Systems. Toshiba GITs are insulated with SF 6 gas rather than traditionally hazardous oil which risks fire, explosions, and contaminating leaks. Additional advantages include reduced footprint and

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  • Silicon columnar microstructures induced by an SF6/O2

    2005-9-2An inductively coupled SF 6 /O 2 plasma is used to form a columnar microstructure (CMS) on silicon samples cooled at very low temperature (~ −100 &C). The formation of this CMS is studied as a function of bias voltage, temperature, RF power and gas pressure. The characteristic mean diameter and mean height of the microstructure are evaluated by image processing toolsCited by: 73

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  • Experimental investigation of SF6–O2 plasma for

    2019-3-19This study examines the impact of varying the internal process parameters, such as the concentrations of oxygen and fluorine in a SF 6 –O 2 plasma, in two capacitively coupled plasma etch chambers with different geometries. Silicon wafers were used to investigate the anisotropic nature of etch profiles. The oxygenCited by: 2

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  • 事业领域-东芝中国 - Toshiba

    Translate this page2021-3-17S 4 IS 固体绝缘开关装置 VKP + 12kV固封极柱真空断路器 VEZ 10kV 中置式金属铠装开关柜 GFC 40.5kV SF6气体绝缘开关柜 GR GR型综合继电保护装置 VY 40.5kV 真空断路器 VEZ-(F-C)

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  • A review on SF6 substitute gases and research status of

    2018-11-1The health damage caused by SF 6 and its by-products obviously exist. In 1990, Kraut and Lilis reported six workers who contacted SF 6 decomposition products in an appliance repair facility; the workers were exposed without protection in a closed space for more than 6 h (Kraut and Lilis, 1990).The initial symptomsCited by: 14

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  • Utilities | Toshiba International Corporation

    Toshiba International Corporation (TIC) is Toshibas premiere manufacturing base in North America. Products include electric motors and motor controls, adjustable speed drives, power electronics, transmission and distribution systems, and more.

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  • SF6-alternative gases for application in gas-insulated

    2018-3-20The environmental problems caused by greenhouse gases have received unprecedented attention. Sulfur hexafluoride (SF 6), which is the preferred gas for use in gas-insulated switchgear (circuit breakers, disconnect switches, etc. for high-voltage electrical circuits), has a very high global warming potential, andCited by: 72

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  • 东芝中国

    Translate this page2021-3-17东芝集团创立于1875年,致力于为人类和地球的明天而努力奋斗,力争成为能创造丰富的价值并能为全人类的生活、文化作贡献的企业集团,东芝集团业务领域包括数码产品、电子元器件、社会基础设备、家电等。

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  • Home | Toshiba International Corporation

    Toshiba International Corporation (TIC) is Toshibas premiere manufacturing base in North America. Products include electric motors and motor controls, adjustable speed drives, power electronics, transmission and distribution systems, and more.

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  • Did anyone have experience in etching SiO2 with SF6 in

    The gasese we have are: SF6(0-100sccm), O2(0-20sccm), Ar(0-5sccm), and C4F8. my sample is 3um SiO2 deposited on the surface of Si wafer. The recipe I designed for 3um SiO2 etching is:A more typical silicon-oxide recipe from the semiconductor industry would be to use Ar/O2/C4F8:  80:10:10%. Using argon dilution boost the electron...Best answer 11Hi,I never used SF6 to etch SiO2 before coz SF6 is a bit toxic and it migh leave some residue over the etched samples. I suggest you use XPS or si...1We also use C4F8 as the chemically active component in RIE oxide etching. SF6 etches silicon much faster than SiO2, so as soon as you break through...2why dont you use HF for SiO2 etching.?it is more easy, fast and realiable 0oxide is a typical hard mask in ICP/DRIE etching.  Oxide is also used as an etch stop for SF6, such as if you have a oxide nitride stack, SF6 is a...0On our Panasonic ICP system, I developed the following recipe using a Chromium hard mask (not photoresist, which etches rather quickly in this SF6...0To my experience, yes solely SF6, etches SiO2 in ICP but I am not sure of the etch rate.0

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  • Etching mechanism of the single-step through-silicon

    2015-4-22Etching mechanism of the single-step through-silicon-via dry etch using SF 6/C 4F 8 chemistry Zihao Ouyanga) and D. N. Ruzic Center for Plasma Material Interactions, Department of Nuclear Plasma and Radiological Engineering,

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  • NNCI Site Tool Type Gases Application Wafer size

    2020-1-23NNCI Site Tool Type Gases Application Wafer size Cornell Plasmatherm. SF6, C4F8, O2, Ar: Deep silicon etch: 100mm Versaline ICP; Deep Ge etch DSEIII SOI; Cornell Unaxis 770 ICP; SF6, C4F8, O2, Ar Deep silicon etch; 100mm Mixed silicon etch 150mm; Release Cornell Ptherm 770 left chamber ICP; Cl2, BCl3, SF6, O2,

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  • SF6-alternatives Recovery of Polluted pricing

    sf 6 o2 measurement tools Safe and efficient Gas detection is specifed for safe monitoring and measurement of SF6 levels on HV EHV Gas Insulated Switchgear (GIS) and Transformer rooms, 66kV-220kV. Detectors are located inside protected switchgear rooms to provide accurrate monitoring of gas concentrations - usually

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  • High-temperature etching of SiC in SF6/O2 inductively

    2020-11-17Camara, N. Zekentes, K. Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry. Solid-State Electron. 46 , 1959Cited by: 1

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  • Deep Etching of LiNbO3 Using Inductively Coupled

    2021-3-8This work is an extensive study of the plasma chemical etching (PCE) process of single-crystalline lithium niobate (LiNbO3) in the SF6/O2 based inductively coupled plasma (ICP). The influence of the main technological parameters of the LiNbO3 PCE process, including the distance between the sample and the lower

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  • Protection relay to prevent large-scale

    2021-2-2Toshiba has over 100 years of experience in the development and manufacturing of protection and control systems, our highly reliable products contributing to the stable supply of power all over the world. Today, Toshiba provides complete solutions for protection, control and automation of power networks at all

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  • 1. Dry Etching of SiO2, SiNx, and Si using 80plus

    2020-10-131. Dry Etching of SiO 2, SiN x, and Si using 80plus Reactive Ion Etcher (Graduate Student Fellow Program) Prepare by Prashanth Gopalan (4/3/2014) SiO2 etch • Ar = 38 sccm • CHF3 = 12 sccm • Pressure = 30 mTorr • Power = 200 W • T = 17.5 &C • Etching rate: 33 nm/min Note: Etch rate also depends on the sample sizeAuthor: Prashanth Gopalan

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  • Dry Etch at UCSB - NNIN

    2019-12-19Oxygen plasma clean is used to ensure system stability before each run. Typical O2 clean: 125mT, 20sccm, 450V, 30 minutes. Wet cleans done on as-needed basis. Some low pressure sensitive processes for SiN x etching require wet-clean before runs. Low etch rates for SiN x, SiO2

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  • 2021 Insights into the Global Sulfur Hexafluoride (Sf6

    Global Sulfur Hexafluoride (Sf6) Circuit Breaker Market Report Covers Market Growth Stimulators, Latest Trends, And Future Market Scope. Market Research Store published the latest report on global Sulfur Hexafluoride (Sf6) Circuit Breaker market that provides a complete survey of the company profiles, the product outline,

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  • High-aspect-ratio deep Si etching in SF6/O2 plasma. II

    2010-7-28In this article, the authors focus on the profiles formed by high-aspect-ratio deep Si etching with SF 6 / O 2 plasma mixtures. One of the most serious problems for deep Si etching processes is lateral etching in the upper regions of sidewalls. This lateral etching seems to depend on time (or etched depth) rather than aspect ratio (depth/width). Reducing the SF 6: O 2Cited by: 10

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  • PCA3 - Bacharach, Inc.

    CANADA 800-328-5217 905-882-8985 . Contact . Company. About Bacharach; 110 Years of Innovation; Press Center

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  • MENU - Massachusetts Institute of Technology

    2020-9-16C4H8, SF6, O2; Caution with: when etching through-wafer trenches, the wafer can break. It must be mounted on a 6 carrier wafer. Pieces and 4 wafers also need to be mounted on a carrier wafer. Machine Charges: 7/wafer + 0.04/um

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  • MENU - Massachusetts Institute of Technology

    2020-9-16The type of etch gas (e.g. Cl2 vs BCl3, or SF6 vs CF4) and additional gases (e.g. Ar, O2, N2) can be critical for enabling certain types of etches over others. The mixing of fluorine and chlorine chemistries is strongly discouraged, as it can result in chamber hysteresis and irreproducible results.

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  • Investigation of inductively coupled SF6 plasma etching

    Abstract: Summary form only given. Sulfur hexafluoride (SF 6) plasmas are commonly used in the deep etching of silicon (Si), silicon oxide (SiO 2) and more recently silica glass [1].Due to the complexity of fluorinated plasma environment during Si-based material etching, there are few works presenting experimental and/or theoretical

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  • Oxford Cobra ICP Etcher | CNF Users

    The tool is equipped with the following gas chemistries: HBr, Cl2, BCl3, SF6, O2, H2, Ar and CH3OH. Its purpose is to etch silicon, germanium, silicon carbide, diamond and magnetic based materials. Silicon etching can be facilitated with either HBr, Cl2, or SF6 based chemistries. Limited metal etching is available (eg. W and TiW).

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  • Plasma systems Archive - Muegge

    2021-3-17PLASMA SYSTEMS Semiconductor components have become indispensable for products of our daily life. Nobody wants to imagine a future without them. However, the manufacture of these devices requires highly sophisticated equipment and in-depth process knowledge – and as technology advances, the

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  • 中压断路器 - 中压元器件 | ABB

    Translate this page了解 ABB 中压断路器,ABB 拥有全球领先的户内及户外用中压真空断路器和六氟化硫断路器,满足客户全方位需求。

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  • Oxford 81 Etcher | CNF Users

    The Oxford PlasmaLab 80+ is an 8-inch diameter parallel plate, turbo-pumped RIE system dedicated to processes involving Fluorine based gas chemistries such as CHF3, CF4, and SF6. Processes are available to anistropically etch Silicon Dioxide, Silicon Nitride, and Silicon. Other gases available are Argon, Hydrogen, and Oxygen.

    Get Price
  • Fundamental insulation characteristics of air; N2, CO2,

    SF 6 gas has excellent dielectric strength and interruption performance. For these reasons, it has been widely used for gas‐insulated switchgear (GIS). However, use of SF 6 gas has become regulated under agreements set at the 1997 COP3. Presently, development of a gas circuit breaker (GCB) using CO 2 gas and development of a

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  • SF6 Reclamation cost - mmarzeszow.pl

    sf6-gas gas o2 reclamation unit Quantitative. SF 6 gas o2 reclamation unit Quantitative. Gas Detector Wall-mounted H2s CO O2 CO2 SO2 CL2 NH3 VOC PH3 Gas Detector With LED Display And 4-20mA Bureau of Reclamation (Reclamation) facilities have more than 1,000 power circuit breakers; the most modern of them use sulfur

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