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cf4 DETERMINATION for Hitachi

cf4 DETERMINATION for Hitachi

A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH 3 F/CF 4 /O 2 recipe and a CH 2 F 2 /CF 4 /O 2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity

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  • Surface fluorination of paper in CF4-RF plasma

    Surface fluorination of paper in CF4-RF plasma environments. June 2002; paper were produced using a Hitachi S 570 instru- thus the sharp determination of this variable is extremely

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  • A Rapid Method for Measurement of the Susceptibility

    2020-11-24CF4 4XN, Wales, UK. without added antioxidants, thereby avoidingsome determination ofthe lag time is shown. computer installed with Hitachi enzyme kinetics software. The output from the spectrophotometer was converted into ASCII file format and imported into the spreadsheet program EXCEL

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  • IR spectrum and radiative forcing of CF4 revisited

    3. Results 3.1. Experimental Measurement of Infrared Absorption Spectra [13] As shown in Figure 2, CF 4 has two IR absorption bands; an intense band at 1270–1290 cm −1 and a much weaker band centered at 632 cm −1.CF 4 has a high degree of symmetry and consequently a relatively simple IR spectrum. The intense sharp

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  • Innovative reductive remediation of carbon tetrafluoride

    Request PDF | Innovative reductive remediation of carbon tetrafluoride at room temperature by using electrogenerated Co1+ | Among the non-CO2 greenhouse gases, carbon tetrafluoride (CF4) is the

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  • Material Safety Data Sheet Tetrafluoromethane CF4

    2018-12-10Chemical Formula: CF4 Odor: Odorless Specific Gravity (Air =1): 3.038 10. Stability and reactivity Normal Stable (Conditions to Avoid): Stable under normal conditions. Incompatibilities: May react violently with chemically active metals such Alkali and alkaline earth metals like sodium, potassium and barium, powderedFile Size: 176KB

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  • Comparison of spin-on materials in IMD planarization

    With the total etchant gas flow (CHF3 and CF4) kept constant at 60 sccm, the intersection point corresponding to a 1 : 1 selectivity is observed at a CHF3/CF4 ratio of 0.45 (for AlliedSignals 418) and 0.55 (for Hitachis R7-13). Table 2. Effect of CHF3/CF4 gas flows on etchrates (in Alsec) of PECYD oxide and 418 spin-on

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  • 1547-7037 ASM International Liquidus Projection and

    2011-11-29aCo cF4 Fm3 m Cu A1 ÆÆÆ 1495 ÆÆÆ [16] LM(Co) + CoAl ÆÆÆ ÆÆÆ ÆÆÆ ÆÆÆ Eutectic 1400 L: 81.0-19.0-0 [16] CoAl cP2 Pm3 m CsCl B2 Congruent 1675 50-50-0 This work Co 2Al 5 hP28 P6 3/mmc Co 2Al 5 D8 11 Peritectic 1188 28.6-71.4-0 [3] L + CoAlMCo 2Al 5 ÆÆÆ ÆÆÆ ÆÆÆ ÆÆÆ

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  • A new method for CF morphology distribution evaluation

    2019-10-201. Introduction. Carbon fiber reinforced cement-based composites (CFRC) hold prospect for future civil engineering because of their excellent mechanical , electrical , and thermal properties .They have been proven that the effectiveness of the CFRC properties depends on the carbon fiber (CF)

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  • HITACHI SJ700B SERIES INSTRUCTION MANUAL Pdf

    View and Download Hitachi SJ700B Series instruction manual online. SJ700B Series Inverter. SJ700B Series Inverter pdf manual download. Also for: Sj700b-055h, Sj700b-075h, Sj700b-110h, Sj700b-150h, Sj700b-185h, Sj700b-220h, Sj700b-300h, Sj700b-370h, Sj700b-450h, Sj700b-550h.

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  • Upcycling of waste polyethylene terephthalate plastic

    2020-10-1The morphologies of the PET-K(x)y samples were observed by scanning electron microscopy (SEM, Hitachi S-4300) and high-resolution transmission electron microscopy (HR-TEM, Tecnai G2F30ST). The sp 2 to sp 3 hybridized transformation and formation of defects in the porous carbons were examined by

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  • HITACHI SJ700-2 INSTRUCTION MANUAL Pdf

    View and Download Hitachi SJ700-2 instruction manual online. SJ700-2 SERIES. SJ700-2 inverter pdf manual download. Also for: Sj700-055lff2, Sj700-075lff2, Sj700-110lff2, Sj700-150lff2, Sj700-185lff2, Sj700-220lff2, Sj700-300lff2, Sj700-370lff2, Sj700-450lff2, Sj700-550lff2,...

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  • The effect of reactive ion etch (RIE) process conditions

    2017-8-24A statistical analysis of the measured devices reveals that the threshold voltages vary significantly between the CF4-2 and SF6-16 devices (figure 7). Average forming, set and reset voltages changed from 1.8, 0.77 and −0.76 V for CF4-2 devices to 2.54, 0.63 and −0.86 V for SF6-16 devices.

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  • Isolation of an Anaerobic, Cellulolytic Clostridium

    described for the volatile fatty acid determination. Samples for alcohol analysis were prepared by centrifugation at 11,600 x g for 15 min in a Microfuge 11 centrifuge (Beck-man) to remove cells. Again, 2 pll of supernatant fluid was injected into the gas chromatograph. Foralcohol determina-tion, a glass column (10 ft by 2 mminner

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  • US5786276A - Selective plasma etching of silicon nitride

    A chemical downstream etching (CDE) that is selective to silicon nitrides (SiN) over silicon oxides (SiO) uses at least one of a CH 3 F/CF 4 /O 2 recipe and a CH 2 F 2 /CF 4 /O 2 recipe. Inflow rates are mapped for the respective components of the input recipe to find settings that provide both high nitride etch rates and high selectivity

    Get Price
  • Determination of the Rate Constants for the NH2(X2B1

    2012-2-22The recombination rate constants for the reactions NH2(X2B1) + NH2(X2B1) + M → N2H4 + M and NH2(X2B1) + H + M → NH3 + M, where M was CH4, C2H6, CO2, CF4, or SF6, were measured in the same experiment over presseure ranges of 1–20 and 7–20 Torr, respectively, at 296 ± 2 K. The NH2 radical was

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  • Charge amplification concepts for direction

    TPC modules filled with low-pressure CF4 gas can provide di- rectionality and “head-tail”directional sense, in particular for spin-dependent dark matter searches. We have demonstrated three possibilities for charge- amplification that allow directional detection and “head-tail”determination.

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  • US8048326B2 - Method and apparatus for determining

    The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one

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  • Surface state density evaluation using high‐frequency

    A computational method is described which permits accurate determination of oxide capacitance C 0 and substrate impurity concentration N A (or N D) from high‐frequency capacitance‐voltage (C–U) data of a MOS diode in order to evaluate surface state density accurately as a function of surface potential.Using simulated

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  • SJ700/SJ300/L300P SERIES SJ-DN2 - Hitachi America

    2011-4-66.3.3 Hitachi inverter I/O Instance This I/O instance is able to control the operation control, which is necessary to Hitachi inverters. Master to SJ-DN2: Instance100 (P046: 10) Byte Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 0 - NetRef NetCtrl - Free run stop Fault Reset Run Rev Run Fwd 1 - 2 Speed Reference (Low Byte)

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  • Plasma etching: Yesterday, today, and tomorrow |

    Academia.edu is a platform for academics to share research papers.

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  • This journal is © The Royal Society of Chemistry 2011

    2011-4-28The emission lines chosen for the platinum determination were 204.951 nm, 212.863 nm, and 270.240 nm. Substrate and deposition of colloids a mixture of CHF3/CF4 (20:2 sccm) was utilized with a radiofrequency (RF) power of 40 W and a DC-bias of -97 V. The samples were analyzed using the Hitachi S5200 HRSEM

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  • Coatings | Free Full-Text | Etching Characteristics of

    In this study, we investigated the characteristics of electrode grooves formed by etching silicon nitride (SixNy) films using surface-discharge plasma under Ar/CF4 and He/CF4 gases on the basis of differences in the widths of the electrode grooves etched on the SixNy film. The widths of the grooves etched using Ar as the carrier

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  • Journal of Alloys and Compounds -

    2015-4-12structure determination. Large solid solubility limits, due to substitution among Mg, Zn and Ag atoms in Mg 3Ag and MgZn 2 phases, were observed in the present work. Solid solubility limits of Ag and Zn in the hcp (Mg) phase were found to be less than 1 at.%. The extended solid solubilities of the Mg 12Zn 13,Mg 2Zn 3,

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  • Metrology, Inspection, and Process Control for

    Monday 24 February 2020 8:00 AM - 10:00 AM Location: Convention Center, Grand Ballroom 220A 8:00 am to 8:30 am Welcome and Announcements Symposium Chairs: Will Conley, Cymer, An ASML Company (USA), and Kafai Lai, IBM T. J. Watson Research Ctr. (USA) *Introduction of New SPIE Fellows *Presentation of the

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  • Chemosensors | Free Full-Text | Electrochemical Sodium

    High sodium ion (Na+) consumption leads to high blood pressure which causes many health issues. Real-time determination of Na+ content in food is still important to limit Na+ intake and control the taste of food. In this work, we have developed an electrochemical sensor based on agglomeration of silver nanoparticles (AgNPs)

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  • 生物芯片化学发光免疫法检测人TSH和T4

    Translate this page2015-7-22Y 9325t? 分类号:R335 密’级:无 2 单位代码:10193 学 号:2003201 吃雄耀景天孽 硕士学位论文 生物芯片化学发光免疫法检测人TSH和T4的研究 TSH and T4 detected by a method ofBiochip Magnetic Chemiluminescence Enzyme Immunoassay 研 指 专 研 所 导 业 究 在 究 教 名 方 学 生: 师: 称: 向: 院: 扬勇

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  • Chip-olate and dry-film resists for efficient

    2014-8-22Xu Y, Wang C, Li L, Matsumoto N, Jang K, Dong Y, Mawatari K, Suga T and Kitamori T 2013 Bonding of glass nanofluidic chips at room temperature by a one-step surface activation using an O2/CF4

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  • OSA | TiO2 micro-devices fabricated by laser direct writing

    Constructing micro/nanostructures based on TiO2 has attracted increasing attention due to the excellent properties of TiO2. In this study, we report a simple method to directly fabricate TiO2 micro-devices, including Fresnel lens, gear structures and suspended beams only by laser direct writing and selective-etching processing.

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  • Customized Chemical Compositions Adaptable for

    2020-10-5the determination of a process window available for cleaning of Al/Ti-based residues. The red line shows the removal of blanket Ti, and indicates that no removal of passivation-type Ti occurs for just over 60 sec. By contrast, the removal of as-deposited TiO 2 starts occurring almost immediately, so in this case (where

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  • Plasma modification of cellulose derivatives as

    A film of cellulose acetate was submitted to a cold plasma of tetrafluoromethane or of sulfur hexafluoride. The interactions of these cold plasmas and cellulose acetate lead to a material whose surface has been modified by fluorination. Comparison of CF4 or SF6 plasma treatment shows that fluorine atoms provided by each kind of plasma

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