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cf4 device for Hitachi

cf4 device for Hitachi

Hitachi High-Tech is able to propose solutions for solving clean issues from various perspectives. 3. Creating Value through Customer Collaboration. Although it is very important to accumulate know-how in-house, you don't have to

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  • For Sale: Hitachi CD-60 Super Catalytic Decomposition

    2011-12-18The Hitachi SCDS is designed for processing PFC gases used in semiconductor fabrication. The system features a 60l/min gas throughput and decomposition rates of over 99.4% for CF4, C2F6, CHF3, C3F8, C4F8, NF3, CO and SF6. The Hitachi SCDS offers superior cost of ownership versus Capture/Re-cycle;

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  • Clean Solution System : Hitachi High-Tech GLOBAL

    Hitachi High-Tech is able to propose solutions for solving clean issues from various perspectives. 3. Creating Value through Customer Collaboration. Although it is very important to accumulate know-how in-house, you dont have to

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  • CF4 plasma etching of materials used in microelectronics

    2000-3-1In device fabrication, organic materials are always present because resist masks are the primary method of pattern transfer. In microlithography, the practitioner normally is interested in using resist thicknesses less than 1 μm. But in RIE process, very thin resist layers cannot be used for a deep image transfer from

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  • Dry etching and residue removal of functional

    CF4, which is widely used in the production of semiconductors and aluminum, has a very high global warming potential and extremely long atmospheric lifetime.

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  • The Enhanced Performance of Phase-Change Materials

    Therefore, it can be concluded that the thermal conduction of the CPCM-CF4.5 sample was enhanced by the addition of the aluminum honeycomb panel, and 3D Al-Hc panels have better thermal conductivity than ordinary aluminum honeycomb panels, This may be because of the following: (1) the 3D Al-Hc foil’s thickness is

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  • FABRICATION OF HIGH FREQUENCY SURFACE

    2017-12-29device, insertion loss, bandwidth, positioning of the devices in case of dual device, etc have to be taken care of [12-14]. Resonators and delay lines are the most commonly used devices for chemical sensor applications. Delay lines are comparatively less complex to design and

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  • Future prospects for dry etching

    2017-7-24silicon is etched with a CF4+O2 plasma, the silicon-substrate surface is covered by surface-reaction products, such as SilCmFn and Si. The bottom of the etched pattern is irradiated with ions so that the reaction-product thin-film layer is removed through ion-assisted reactions and the bottom can be etched. On

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  • Mass Flow Controllers | Digital Thermal Flow Meters |

    Ultra-high purity mass flow sensors and devices engineered to satisfy thin film, semiconductor and other high-tech industry requirements; Key Applications. Heat treating, cutting and other thermal

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  • PHU)RUPDWLRQDQG,WV5HPRYDO

    etch, in which CF4 and CHF3 gases are introduced into the etcher and RF power at 400 kHz is used to excite and sus-tain the plasma, in addition to providing energy to direc-tional ions. Excitation generates a variety of ions, neu-trals, and free radicals in the plasma. The CF4 gas is the source of CF ions (x = 1, 2, and 3) and radicals, and

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  • Etch - Lam Research

    2016-11-14Lam’s dielectric etch systems offer application-focused capabilities for creating a wide range of challenging structures in advanced devices. Advanced Memory , Analog Mixed Signal , Discrete Power Devices

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  • Gold etching for microfabrication | SpringerLink

    2014-5-11The etching of gold is a key enabling technology in the fabrication of many microdevices and is widely used in the electronic, optoelectronic and microelectromechanical systems (MEMS) industries. In this review, we examine some of the available methods for patterning gold thin films using dry and wet etching

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  • Resist trimming technique in CF4/O2 high-density

    2003-5-1Transistor of ca. 80-nm gate length has been fabricated successfully using the conventional 248-nm lithography by resist trimming process in CF 4 /O 2 plasmas. The resist trimming step is integrated

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  • 等离子去除半导体PFCs——ppt版_图文_

    Translate this pagewenku.baidu.com›百度文库›语言/资格考试2010-12-8等离子去除半导体PFCs——ppt版_能源/化工_工程科技_专业资料 212人阅读|31次下载 等离子去除半导体PFCs——ppt版_能源/化工

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  • Comparison of spin-on materials in IMD planarization

    With the total etchant gas flow (CHF3 and CF4) kept constant at 60 sccm, the intersection point corresponding to a 1 : 1 selectivity is observed at a CHF3/CF4 ratio of 0.45 (for AlliedSignals 418) and 0.55 (for Hitachis R7-13). Table 2. Effect of CHF3/CF4 gas flows on etchrates (in Alsec) of PECYD oxide and 418 spin-on

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  • CF4 plasma surface modification of asymmetric

    2012-7-15CF 4 plasma treatment showed a moderate etching and a strong fluorination effect which introduced fluorine functional groups in the material. Therefore CF 4 plasma surface modification can be used to reduce the surface energy, enhance the material surface roughness and make the material surface

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  • The effect of reactive ion etch (RIE) process conditions

    2017-8-24CF4-2 devices exhibit a maximum of 250 cycles while the endurance of SF6-16 devices repeatedly exceeded 10k cycles. The lack of an even higher endurance can be attributed to a large device structure increasing capacitive discharges during switching as well as probable low levels of contamination in theCited by: 4

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  • Support equipment|Nanotechnology platform|Office

    ※Click the device name for details. Ultrahigh-voltage electron microscope facility. (Hitachi High-Technologies) Ultrahigh-speed time-resolved photoelectron microscope system (TR-PEEM) JEM-ARM200F Atomic Resolution Analytical Electron Microscope . Titan Transmission Electron Microscope FEI

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  • Applications | Hamamatsu Photonics

    2021-3-15High-Throughput Screening / High-Content Screening.

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  • 2001-O2 gas annealing-PZT_图文_百度文库

    Translate this pagewenku.baidu.com›百度文库›高校与高等教育2015-4-28The surface etched in 30% additive CF4 into Cl2(80%) y Ar(20%) plasma became slightly rougher and the surface roughness that this sample was reannealed at 6508C in O2 atmosphere alleviated as evidenced by the change in root-mean-square (RMS

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  • US5786276A - Selective plasma etching of silicon nitride

    Selective plasma etching of silicon nitride in presence of silicon or silicon oxides using mixture of CH3F or CH2F2 and CF4 and O2

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  • Surface micromachining of polydimethylsiloxane for

    2017-1-25This method incorporated a unique step of using oxygen plasma to activate PDMS surfaces to a hydrophilic state, thereby enabling improved adhesion of photoresist on top of PDMS surfaces for subsequent photolithography. RIE was applied to transfer patterns from photoresist to underlying PDMS thin films.

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  • Connecting to PLCs and Other Devices

    2008-5-21Connecting to PLCs and Other Devices Operations and Monitoring 4–4 Connecting to PLCs and Other Devices Hitachi inverters (drives) are useful in many types of applications. During installation, the inverter keypad (or other programming device) will facilitate the initial configura-tion.

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  • Addendum to SJ100 Series Inverter Instruction -

    2020-3-6Hitachi SJ100DN DeviceNet Series inverters are optimized for use on a DeviceNet network. The inverter can respond to commands such as Run/Stop from a network host device, for example. SJ100DN inverters can also drive a motor in stand-alone mode, without a network connection. In that case, you use the inverter’s

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  • Samsung Ultrasound System

    Translate this pageIn healthcare’s changing world, Samsung works with you to provide the latest technology, delivered by innovative samsungs ultrasound systems 국내 이용자는 의료기기법에서 정하는 의료기기 사전 광고 심의를 완료한

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  • US4357203A - Plasma etching of polyimide - Google

    An improvement in the formation of multilayer metallization systems wherein vias are formed in a dielectric insulating layer of polyimide which overlies a layer of metal such as aluminum. In accordance with the invention, the residual film remaining after oxygen plasma etching of the polyimide is efficiently removed by a second plasma

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  • Find the Click HERE - Artisan Technology Group

    2020-10-4Hitachi SJ100DN DeviceNet Series inverters are optimized for use on a DeviceNet network. The inverter can respond to commands such as Run/Stop from a network host device, for example. SJ100DN inverters can also drive a motor in stand-alone mode, without a network connection. In that case, you use the inverter s

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  • HITACHI Ignition Coil For Repair Honda Car System

    Get your next HITACHI Ignition Coil For Repair Honda Car System Conformity Genuine Part Number: 30510-PT2-006 Sold Separately 1 directly via Croooober Japan, the largest marketplace for used auto parts - worry-free worldwide shipping | Representative model model RD1 / EG2 / EJ4 / GH1 / RH1 / CD3 / CD6 / CF2 / CF4 /

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  • Shizu TAKEDA | Hitachi, Ltd., Tokyo

    Shizu TAKEDA of Hitachi, Ltd., Tokyo | Read 119 publications | Contact Shizu TAKEDA

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  • READ THIS FIRST! - Hitachi

    2020-3-6Hitachi L100DN DeviceNet Series inverters are optimized for use on a DeviceNet network. The inverter can respond to commands such as Run/Stop from a network host device, for example. L100DN inverters can also drive a motor in stand-alone mode, without a network connection. In that case, you use the inverter’s

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  • Mechanism of Ultraviolet Bonding of Perfluoropolyethers

    2007-3-14The mechanism of ultraviolet (UV) bonding of perfluoropolyether (PFPE) boundary lubricants on magnetic disk surfaces is re-examined experimentally. It is found that UV-emitted photoelectrons may contribute a negligible part, and instead the UV bonding correlates with the direct photodissociation of PFPE molecules.

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