News Center
sf6 o2 process CHINT

sf6 o2 process CHINT

CHINT process for subway. Jul 14, 2015The Chint Group, a leading electric device and equipment manufacturer from China's eastern Zhejiang province, showcased its latest smart power distribution system which can be applied in

[email protected]
News Detail
  • Passivation mechanisms in cryogenic SF6/O2 etching

    Submicron trenches with a critical aperture of about 0.8 μm were etched by the STiGer cryoetching process, which consists of alternating etch (SF6 or SF6/O2 chemistry) and passivation (SiF4/O2

    Get Price
  • Two Cryogenic Processes Involving SF6, O2, and SiF4 for

    A cryogenic SF6/O2 plasma process has been used to investigate the etching of deep holes in silicon wafers. The influence of crystallographic and aspect ratio dependence of the etch rate on the

    Get Price
  • Processand Reliabilityof SF6/O2 PlasmaEtched

    2015-6-18Figure 1. Effects of process parameters on the Si etch rate. When testing the effects of one parameter on the rate, the other two are kept constant. It has previously been determined that the effect of O2 on the SF6 plasma is a dramatic increase in the F atom concentration and a subsequent decrease in lateral etching

    Get Price
  • Passivation mechanisms in cryogenic SF6/O2 etching

    2003-10-17This process requires a low chuck temperature of about −100 &C to form a passivating layer on the sidewalls while silicon is etched on the trench bottom. The plasma is composed of a SF 6 /O 2 mixture. Cryogenic etching was first studied by Tachi et al in 1988 [ 8] and then by other teams (see, for example, [ 9, 10 ]).Cited by: 122

    Get Price
  • Two Cryogenic Processes Involving SF6, O2, and SiF4 for

    2019-12-2This process only works at very low temperature and avoids reactor wall contamination. A second process alternating long anisotropic plasma steps with short overpassivating steps is investigated. This second process gives an etch rate as high as the one obtained in standard cryoetching and allows blocking of the undercutCited by: 23

    Get Price
  • Single Step Cryogenic SF6O2 Plasma

    Translate this pagewenku.baidu.com›百度文库›互联网2011-6-23In the cryogenic process, O2 is added as a sidewall-passivating agent, typically about 10%. Quartz liners that protect the substrate against contamination from the reactor 1 Potential application of the high aspect ratio cryogenic SF6/O2 plasma ething process for developing trench based inertial micromechanical

    Get Price
  • Electron Density and Optical Emission Measurements

    2018-12-1as oxygen was added to the SF6 discharge, reached their maximum at an O2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly in&uenced by the addition of O2. Keywords: OES, hairpin probe, SF6, O2, electron density, atomic &uorine PACS: 52.70.-m DOI:

    Get Price
  • Decomposition of SF6 in an RF Plasma Environment

    2018-6-12SF6 exceeded 99% and led to the stable production of SO 2. The possible reaction processes are as follows:21 SF 6 → −4F SF 2 → + F SF 3 → + F SF 4 → + F SF 5 (4) SF 2 + O → SOF + F (5) SOF + O → SO 2 + F (6) Oxygen radicals from the etching process can convert sul-Cited by: 25

    Get Price
  • Study on Pyrolysis Characteristics of SF6

    Translate this page2020-10-21Instead, the basic route for O2 to participate in the SF6 pyrolysis process is X + Y + O2 = XO + YO. Furthermore, the reactivity order of various groups to O2 is (SF2)* (SF3)* (SF4)* F*, so O2 is more likely to participate in the reaction by attacking (SF3)* or (SF2)* groups.

    Get Price
  • 2 TFT_LCD Array Processs讲义0821_图

    Translate this pagewenku.baidu.com›百度文库›语言/资格考试2010-12-6Uniformity Control 2. A-Si Residue 3. Taper Control in Island, SiNx, and GE Etch 4. Surface Roughness Control in N+ Etch 5. SD + Back Channel Thru Etch/ EPD 6. Double SiNx Etch and Issues 7. Polymer Remove(Contact Issues) 8. Ashing by O2

    Get Price
  • Etching mechanism of the single-step through-silicon

    2015-4-22Low-pressure inductively coupled plasma etching of benzocyclobutene with SF6/O2 plasma chemistry J. Vac. Sci. Technol. B 30, 06FF06 (2012); 10.1116/1.4758765 Kinetics of electron attachment to SF3CN, SF3C6F5, and SF3 and mutual neutralization of Ar+ with CN and C6F5 J. Chem. Phys. 134, 044323

    Get Price
  • Processing of inertial sensors using SF6-O2 Cryogenic

    Craciun, G, Yang, H, Pakula, L Blauw, MA 2003, Processing of inertial sensors using SF6-O2 Cryogenic plasma process. in s.n. (ed.), SAFE 2003 Semiconductor advances for future electronics. Stichting voor de Technische Wetenschappen, Utrecht, pp. 683-686, Semiconductor advances for future electronics, Veldhoven, TheAuthor: G Craciun, H Yang, L Pakula, MA Blauw

    Get Price
  • CHINT process for subway - karina.net.pl

    CHINT process for subway. Jul 14, 2015The Chint Group, a leading electric device and equipment manufacturer from Chinas eastern Zhejiang province, showcased its latest smart power distribution system which can be applied in

    Get Price
  • Study of SiO2 Etching Processing with CH4/SF6 Plasmas

    Abstract. Silicon dioxide (SiO 2) layers using photoresist (PR) masks are etched by inductively coupled plasma in CH 4 /SF 6 under various etching conditions. A thin CH x F y polymer layer which exists on the surface of sample during steady‐state etching is observed. The steady‐state CH x F y layer reduces the physical sputtering of

    Get Price
  • Development of Process for Fast Plasma-Chemical

    Process for deep plasma-chemical etching of single-crystal quartz plates in a SF 6 /O 2 gas mixture was developed. The method of scientific experiment design based on the Taguchi matrix technique was used to rank basic technological parameters (bias voltage applied to the substrate holder, output power of the high-frequency generator, oxygenCited by: 13

    Get Price
  • High-temperature etching of SiC in SF6/O2 inductively

    2020-11-17These structures were obtained by dry etching in SF 6 /O 2 inductively coupled plasma (ICP) at increased substrate holder temperatures. It was shown that change in the temperature of the substrateCited by: 1

    Get Price
  • Experimental investigation of SF6–O2 plasma for the

    Alshaltami, Khaled (2020) Experimental investigation of SF6–O2 plasma for the advancement of the anisotropic Si etch process. PhD thesis, Dublin City University. Full text available as:

    Get Price
  • High-aspect-ratio deep Si etching in SF6/O2 plasma. II

    2021-2-12In this article, the authors focus on the profiles formed by high-aspect-ratio deep Si etching with SF6/O2 plasma mixtures. One of the most serious problems for deep Si etching processes is lateral etching in the upper regions of sidewalls. This lateral etching seems to depend on time (or etched depth) rather than aspect ratio

    Get Price
  • Solutions - Off-grid PV | CHINT

    The controller adopts MPPT technology and maximizes the utilization of solar panels; System sampling advanced circuit topology design brings ultra-high power conversion efficiency of equipment, system efficiency up to 95%, reducing energy loss process. Meanwhile it has intelligent battery management, monitoring alarm

    Get Price
  • Decomposition of SF6 in an RF plasma environment

    The decomposition fraction of SF6 [etaSF6 (C(in)-C(out))/C(in) x 100%] and the mole fraction profile of the products were investigated as functions of input power and feed O2/SF6 ratio in an SiO2 reactor. The species detected in both SF6/Ar and SF6/O2/ Ar RF plasmas were SiF4, SO2, Fe2, SO2F2, SOF2, SOF4, S2F10, S2OF10,Cited by: 25

    Get Price
  • Deep Etching of LiNbO3 Using Inductively Coupled

    2021-3-8This work is an extensive study of the plasma chemical etching (PCE) process of single-crystalline lithium niobate (LiNbO3) in the SF6/O2 based inductively coupled plasma (ICP). The influence of the main technological parameters of the LiNbO3 PCE process, including the distance between the sample and the lower

    Get Price
  • MENU - Massachusetts Institute of Technology

    2020-9-16The type of etch gas (e.g. Cl2 vs BCl3, or SF6 vs CF4) and additional gases (e.g. Ar, O2, N2) can be critical for enabling certain types of etches over others. The mixing of fluorine and chlorine chemistries is strongly discouraged, as it can result in chamber hysteresis and irreproducible results.

    Get Price
  • Dry_Etch_细化资料 - 豆丁网

    Translate this page2013-2-14主要使用反应气体:He、O2、SF6、Cl2 3.3.2.5.2 Etch的刻蚀方式3.3.2 Dry Etch 概要及工艺 3.3.2.5.3 Process的影响 RFPower Pressure对EtchRate的影响 Edge Center RFPower 影响:RF Power增大,整体的E/R也增 特点:RFPower增大 中心

    Get Price
  • NVF3M Series Inverter | CHINT

    NVF300M Series Mini inverter is a kind of high-performance vector control inverter, which is independently developed by our company. It adopts advanced control strategy to achieve a high-precision magnetic flux vector torque control, and it is characterized by high control precision, wide speed range, large starting torque,

    Get Price
  • Global SF6 Gas Circuit Breaker Market 2021 by

    The SF6 Gas Circuit Breaker market report provides a detailed analysis of global market size, regional and country-level market size, segmentation market growth, market share, competitive Landscape, sales analysis, impact of domestic and global market players, value chain optimization, trade regulations, recent developments,

    Get Price
  • SF6 plasma treatment for leakage current reduction of

    2018-9-1In this study, we have investigated the effects of SF 6 plasma treatment on the isolation leakage current characteristics of AlGaN/GaN heterojunction field-effect transistors (HFETs). The device isolation was performed by Cl 2 /BCl 3-based plasma etching process followed by SF 6 plasma treatment for 1 min. It was found that the SF 6Cited by: 2

    Get Price
  • Low temperature etching of Si in high density plasma

    1995-2-1Low temperature etching of Si with SF 6 has been studied, using a DECR system and a special Helicon type plasma source. In contrast to the current understanding of low temperature etching, we did not observe a “freezing” of the lateral etching reaction, but obtained isotropic etch profiles, even at temperatures below −120& C. Anisotropic etch profiles are obtained by an addition of O

    Get Price
  • SF6 current transformer for railroad

    SF6 current transformer for railroad The current transformer is of the resin molded cable through-out type or three phase foil-insulated type with ring cores mounted in a common housing. Rated SF6 gas pressure is unified at 0.5 MPa for all components.

edge-iconRelated News
toTop
Click avatar to contact us
Chat Online