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sf6 o2 process GE

750kv-substation-onsite-service. On-site SF6 recovery service is driven by a trailer which equipped with our full set of recovery, refilling, purification equipment and measuring instrument, drive to the substandard gas compartment, perform onsite shutdown and maintenance, directly recover unqualified SF6 gas, recycle and

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  • Comparison of etching processes of silicon and

    As a result, with a SF6-O2 proportion of 60%, an optimized RMS roughness of 0.9 nm has been revealed for Ge surfaces after etching with a selectivity of over 4 for vertical etching to horizontal

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  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with

    This paper presents the results of dry plasma etching of single crystal silicon using SF6 and O2 as process gases in a traditional Reactive Ion Etcher.

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  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with

    2019-3-18The impact of the O 2 content in SF 6 -O 2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O 2 content. Below 50% of O 2Cited by: 6

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  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with

    The impact of the O2 content in SF6-O2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied. The characteristics of etch rate and sidewall profile are greatly affected by the O2 content. Below 50% of O2 content, a large variation in Ge

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  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with

    2019-3-18The impact of the O 2 content in SF 6-O 2 gas mixtures on the etch rate and sidewall profile of silicon (Si), germanium (Ge), and phosphorous doped germanium (Ge:P) in reactive ion etching has been studied.Cited by: 6

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  • Single Step Cryogenic SF6O2 Plasma

    Translate this pagewenku.baidu.com›百度文库›互联网2011-6-23Etching is done with SF6 as the reactive gas, because SF6 gives the highest etch rates. Gas flows are in the range of 50-500 sccm, which leads to pressures of 0.5-5 Pa. In the cryogenic process, O2 is added as a sidewall-passivating agent, typically about 10%.

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  • Processand Reliabilityof SF6/O2 PlasmaEtched

    2015-6-18Figure 1. Effects of process parameters on the Si etch rate. When testing the effects of one parameter on the rate, the other two are kept constant. It has previously been determined that the effect of O2 on the SF6 plasma is a dramatic increase in the F atom concentration and a subsequent decrease in lateral etching

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  • Theoretical study of the neutral decomposition of SF6 in

    2016-8-26In the presence of H2O and O2, the dissociation products of SF6will decompose to form several main stable byproducts (i.e. SOF2, SOF4and SO2F2) in an electrical discharge. These byproducts are chemically active and have been shown experimentally to be associated with discharge faults. However, theCited by: 39

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  • Decomposition of SF6 in an RF Plasma Environment

    2018-6-12SF6 exceeded 99% and led to the stable production of SO 2. The possible reaction processes are as follows:21 SF 6 → −4F SF 2 → + F SF 3 → + F SF 4 → + F SF 5 (4) SF 2 + O → SOF + F (5) SOF + O → SO 2 + F (6) Oxygen radicals from the etching process can convert sul-Cited by: 25

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  • Green Gas for Grid - g3 - SF6 Free Solutions

    SF 6 SF6 (or Sulphur Hexafluoride) had been the standard gas used inside high voltage electrical equipment as an insulating and arc-quenching medium. However, SF 6 SF6 is also listed as anWhat is GE’s g3?g³, (pronounced g cubed) is GEs game-changing alternative to SF6 gas, developed for HV electrical transmission equipment.Is there an alternative gas to SF6 for HV equipment?Yes, there is GE’s green gas for grids, g3 pronounced gcubed that is GEs game-changing alternative to SF6 gas, developed for HV electrical transmi...Can I replace SF6 by g3 in existing HV equipment?Direct retrofit is not possible. However, retrofits could be possible in some specific cases, though not with strictly identical performance or ope...Is GE’s g3 gas dangerous or toxic?GE’s g3 green gas is an inorganic, colorless, odorless, non- flammable, non-toxic gas, exactly like SF6.Does GE have SF6-free switchgear?GE’s manufactures g3 high voltage products as an alternative to SF6. These products are type-tested and available for live-tank circuit breakers an...

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  • Precision plasma etching of Si, Ge, and Ge:P by SF6 with

    2014-5-1adshelp[at]cfa.harvard.edu The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86ACited by: 6

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  • Passivation mechanisms in cryogenic SF6/O2 etching

    2003-10-17At GREMI laboratory, the cryogenic etching process is investigated. This process requires a low chuck temperature of about −100 &C to form a passivating layer on the sidewalls while silicon is etched on the trench bottom. The plasma is composed of a SF 6 /O 2 mixture.Cited by: 122

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  • Cornell NanoScale Facility Dry Etch Capabilities

    2020-1-23SF6(1.5sccm) to an O2/Ar (50/5sccm) leads to smooth etch morphology. • SF6 assists in the preferential etching of amorphous carbon at intergrain boundaries. • Aluminum used as an etch mask. • Etch rates of 270nm/min with selectivity to Al of 40:1 with etch parameters of 2800W/50W at 5mTorr.

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  • Deep reactive ion etching of in situ boron doped LPCVD

    2013-10-1This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chemical vapor deposited Ge 0.7 Si 0.3 alloy in SF 6 and O 2 plasma. The effect of RF power, SF 6 flow, O 2 flow and temperature on the etch rate of Ge 0.7 Si 0.3 films with a boron concentration of 2.1 × 10 21 atoms/cm 3 isCited by: 1

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  • Etching mechanism of the single-step through-silicon

    2015-4-22A common approach for TSV structures is to perform an alternating etching and passivation steps, known as the Bosch process.3In the Bosch approach, fluorine-rich gases, fre- quently SF. 6, are used as the etch gas to maximize etch rate (ER) during the etching step, and fluorocarbon gases, such as C. 4F. 8,C.

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  • SF6 gas Mixtures process for mining - karina.net.pl

    Abstract Effects of process parameters on the etch rate and generation of etch by-product molecules during Si3N4 layer etching in SF6/O2 and C3F6O/O2 plasmas were investigated in a dual-frequency capacitively coupled plasma etcher in order to evaluate the etch characteristics and global warming effects of emitted gases.

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  • A Kinetic Model for Plasma Etching Silicon in a SF6/O2 RF

    Abstract: Time-dependent Boltzmann electron distribution calculations have been made at constant power and pressure in a SF6/O2 plasma with a varying oxygen mole fraction. The results show that as the oxygen fraction increases in a SF6/O2 plasma, the number of high-energy electrons in the tail of the electron distribution and theCited by: 82

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  • SF6 sensitized CO2-laser chemical vapor deposition of a

    1994-4-1The observation that the sensitizer is able to compensate for small changes in the laser power and the observed maxima in the dependence of the germane consumption (Fig. 1) and the digermane concentration ( Fig. 2) on the SF6 concentrations can be explained by the temperature dependence of theCited by: 5

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  • Processing of inertial sensors using SF6-O2 Cryogenic

    Craciun, G, Yang, H, Pakula, L Blauw, MA 2003, Processing of inertial sensors using SF6-O2 Cryogenic plasma process. in s.n. (ed.), SAFE 2003 Semiconductor advances for future electronics. Stichting voor de Technische Wetenschappen, Utrecht, pp. 683-686, Semiconductor advances for future electronics, Veldhoven, TheAuthor: G Craciun, H Yang, L Pakula, MA Blauw

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  • Deep reactive ion etching of in situ boron doped

    2013-6-12Ge 0.7Si 0.3 Etch selectivity Resonator abstract This paper reports on deep reactive ion etching (DRIE) of in situ highly boron doped low pressure chem-ical vapor deposited Ge 0.7Si 0.3 alloy in SF 6 and O 2 plasma. The effect of RF power, SF 6 flow, O 2 flow and temperature on the etch rate of Ge 0.7Si 0.3 films with a

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  • Cheap Sf6 Detection System Honeywell

    750kv-substation-onsite-service. On-site SF6 recovery service is driven by a trailer which equipped with our full set of recovery, refilling, purification equipment and measuring instrument, drive to the substandard gas compartment, perform onsite shutdown and maintenance, directly recover unqualified SF6 gas, recycle and

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  • Experimental investigation of SF6–O2 plasma for the

    Alshaltami, Khaled (2020) Experimental investigation of SF6–O2 plasma for the advancement of the anisotropic Si etch process. PhD thesis, Dublin City University. Full text available as:

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  • A Study of Parameters Related to the Etch Rate for a Dry

    A Study of Parameters Related to the Etch Rate for a Dry Etch Process Using NF3/O2 and SF6/O2. Seon-Geun Oh,1 Kwang-Su Park,1Cited by: 5

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  • In situ x-ray photoelectron spectroscopy analysis of

    In situ x-ray photoelectron spectroscopy analysis of SiO xF y passivation layer obtained in a SF 6/O 2 cryoetching process J. Pereira,1 L. E. Pichon,1,2 R. Dussart,1,a C. Cardinaud,3 C. Y. Duluard,1 E. H. Oubensaid,1 P. Lefaucheux,1 M. Boufnichel,2 and P. Ranson1 1GREMI, Université d’Orléans, CNRS, BP6744, 45067 Orléans Cedex 2,

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  • Byproducts of Sulfur Hexafluoride (SF6) Use in the

    2016-2-11(CIGRE reports that had oxygen been administered more quickly, the damage would have been greatly reduced.) C Several instances of minor skin irritation from exposure to SF 6 decomposition products have been reported to CIGRE (Mauthe and Pettersson 1991). These instances of human exposure provide

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  • NNCI ETCH Workshop -Stanford NNCI PlasMA Etch

    2020-1-23Process Requirements and Influencing Factors Material to be Etched/ Process Etchability, volatile by-products Process reproducibility Etch Rate, Depth Ge SF6, C4F8, O2 ICP stsetch2 Si SiGe, Ge SF6, C4F8, O2 ICP uetch SiO2 - isotropic Varied HF vapor and ethanol Vapor etching

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  • A Study of Parameters Related to the Etch Rate for

    The characteristics of the dry etching of :H thin films for display devices using SF6/O2 and NF3/O2 were investigated using a dual-frequency capacitively coupled plasma reactive ion etching (CCP-RIE) system. The investigation was carried out by varying the RF power ratio (13.56 MHz/2 MHz), pressure, and gas flow ratio. For the :H film, the etch rates obtained using NF3/O2

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  • The Southampton Nanofabrication Centre

    This etching process is particularly suitable for silicon-based MEMS and NEMS devices where anisotropic profiles are essential. Can process Si based materials (Si, poly Si, Si3N4, SiGe) and III-V materials (InGaAs, InP). Deep Si etcher; Can accommodate smaller samples up to 200mm wafer. SF6/C4F8/Ar/O2

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